منابع مشابه
Plasma properties in high power impulse magnetron sputtering
.....................................................................................................I PREFACE.......................................................................................................III PAPERS INCLUDED IN THE THESIS ........................................................... V RELATED PUBLICATIONS NOT INCLUDED IN THE THESIS.................... VI ACKNOWLEDGEMENTS ...
متن کاملCrNx Films Prepared by DC Magnetron Sputtering and High-Power Pulsed Magnetron Sputtering: A Comparative Study
CrNx (0 ≤ x ≤ 0.91) films synthesized using highpower pulsed magnetron sputtering, also known as high-power impulse magnetron sputtering (HiPIMS), have been compared with those made by conventional direct-current (dc) magnetron sputtering (DCMS) operated at the same average power. The HiPIMS deposition rate relative to the DCMS rate was found to decrease linearly with increasing emission streng...
متن کاملHigh power impulse magnetron sputtering discharge
J. T. Gudmundsson, N. Brenning, Daniel Lundin and Ulf Helmersson, High power impulse magnetron sputtering discharge, 2012, Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, (30), 030801. http://dx.doi.org/10.1116/1.3691832 Copyright: American Vacuum Society, This article may be downloaded for personal use only. Any other use requires prior permission of the author and the ...
متن کاملFilm thickness distribution in magnetron sputtering
Of crucial importance to the thin film process engineer is an understanding of the parameters which affect the film thickness distributions which may be obtained from magnetron sources. This paper describes how variations in source design, target erosion and source-to-substrate distance affect observed uniformities from a magnetron source. A simple method of simulating magnetron sources using t...
متن کاملPulsed DC Power Supplies for Dual Magnetron Sputtering
Key features of this waveform are the voltage boost period following each polarity transition and fast current rise time due to that boost. Ideally, the boost voltage would be adjustable. It is expected that adjusting the boost voltage will enable some tuning of the film properties, since it will effectively allow tuning of ion energy within the process. Additionally, adjustable duty, the ratio...
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ژورنال
عنوان ژورنال: IEEE Transactions on Plasma Science
سال: 2011
ISSN: 0093-3813,1939-9375
DOI: 10.1109/tps.2011.2157172